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HGT1S2N120CN

HGT1S2N120CN Fairchild Semiconductor

FAIRS23177-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
148+3.29 EUR
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Technische Details HGT1S2N120CN Fairchild Semiconductor

Description: IGBT 1200V 13A 104W I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A, Supplier Device Package: TO-262, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/205ns, Switching Energy: 96µJ (on), 355µJ (off), Test Condition: 960V, 2.6A, 51Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 104 W.

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HGT1S2N120CN HGT1S2N120CN Hersteller : onsemi HGT1S2N120CN.pdf Description: IGBT 1200V 13A 104W I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
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