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IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1 Infineon Technologies


Infineon-IAUC120N04S6N006-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e120b4b310b3 Hersteller: Infineon Technologies
Description: IAUC120N04S6N006ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+2.13 EUR
Mindestbestellmenge: 5000
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Technische Details IAUC120N04S6N006ATMA1 Infineon Technologies

Description: IAUC120N04S6N006ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 3V @ 130µA, Supplier Device Package: PG-TDSON-8-53, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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IAUC120N04S6N006ATMA1 IAUC120N04S6N006ATMA1 Hersteller : Infineon Technologies Infineon-IAUC120N04S6N006-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e120b4b310b3 Description: IAUC120N04S6N006ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 60A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10117 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.56 EUR
10+ 3.84 EUR
100+ 3.1 EUR
500+ 2.76 EUR
1000+ 2.36 EUR
2000+ 2.22 EUR
Mindestbestellmenge: 4
IAUC120N04S6N006ATMA1 IAUC120N04S6N006ATMA1 Hersteller : Infineon Technologies Infineon_IAUC120N04S6N006_DataSheet_v01_00_EN-1929635.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 11244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.59 EUR
10+ 3.87 EUR
25+ 3.85 EUR
100+ 3.13 EUR
500+ 2.78 EUR
1000+ 2.24 EUR
IAUC120N04S6N006ATMA1 IAUC120N04S6N006ATMA1 Hersteller : Infineon Technologies infineon-iauc120n04s6n006-datasheet-v01_00-en.pdf Trans MOSFET N-CH 40V 405A T/R
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