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IAUC120N06S5L011ATMA1

IAUC120N06S5L011ATMA1 Infineon Technologies


Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
auf Bestellung 2354 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.88 EUR
10+ 4.05 EUR
100+ 3.22 EUR
500+ 2.73 EUR
1000+ 2.31 EUR
2000+ 2.2 EUR
Mindestbestellmenge: 4
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Technische Details IAUC120N06S5L011ATMA1 Infineon Technologies

Description: MOSFET_)40V 60V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310A (Tj), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 130µA, Supplier Device Package: PG-TDSON-8-53, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V.

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IAUC120N06S5L011ATMA1 Hersteller : Infineon Technologies infineon-iauc120n06s5l011-datasheet-v01_01-en.pdf IAUC120N06S5L011 Trans MOSFET T/R
Produkt ist nicht verfügbar
IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 Hersteller : Infineon Technologies Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Produkt ist nicht verfügbar
IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 Hersteller : Infineon Technologies Infineon_IAUC120N06S5L011_DataSheet_v01_01_EN-3106743.pdf MOSFET
Produkt ist nicht verfügbar