IAUC50N08S5L096ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.83 EUR |
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Technische Details IAUC50N08S5L096ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A, Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2V @ 24µA, Supplier Device Package: PG-TDSON-8-33, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V.
Weitere Produktangebote IAUC50N08S5L096ATMA1 nach Preis ab 0.87 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IAUC50N08S5L096ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 24µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V |
auf Bestellung 6539 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUC50N08S5L096ATMA1 | Hersteller : Infineon Technologies |
SP005423083 |
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| IAUC50N08S5L096ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 13.9mΩ Drain current: 16A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W Anzahl je Verpackung: 5000 Stücke |
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IAUC50N08S5L096ATMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
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| IAUC50N08S5L096ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 16A; Idm: 200A; 60W; PG-TDSON-8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 13.9mΩ Drain current: 16A Drain-source voltage: 80V Case: PG-TDSON-8 Gate charge: 29nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: 200A Power dissipation: 60W |
Produkt ist nicht verfügbar |