IAUC60N04S6N050HATMA1 Infineon Technologies
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.11 EUR |
| 5000+ | 1.06 EUR |
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Technische Details IAUC60N04S6N050HATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 52W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 60A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V, Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 13µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote IAUC60N04S6N050HATMA1 nach Preis ab 1.12 EUR bis 2.71 EUR
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IAUC60N04S6N050HATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET 2N-CH 40V 60A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 13µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 4073 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUC60N04S6N050HATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 4 |
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| IAUC60N04S6N050HATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
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IAUC60N04S6N050HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1027pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 13µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IAUC60N04S6N050HATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Pulsed drain current: 171A Power dissipation: 52W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |