IAUC64N08S5L075ATMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 13A
Pulsed drain current: 256A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.1mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IAUC64N08S5L075ATMA1 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 13A, Pulsed drain current: 256A, Power dissipation: 75W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 11.1mΩ, Mounting: SMD, Gate charge: 37nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote IAUC64N08S5L075ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IAUC64N08S5L075ATMA1 | Hersteller : Infineon Technologies | MOSFET MOSFET_(75V 120V( |
Produkt ist nicht verfügbar |
||
IAUC64N08S5L075ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 13A Pulsed drain current: 256A Power dissipation: 75W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 11.1mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |