auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.66 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.43 EUR |
| 250+ | 2.24 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 1.74 EUR |
| 2000+ | 1.65 EUR |
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Technische Details IAUCN04S6N013TATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230A (Tc), Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V, Power Dissipation (Max): 133W (Tc), Vgs(th) (Max) @ Id: 3V @ 60µA, Supplier Device Package: PG-LHDSO-10-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S6N013TATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IAUCN04S6N013TATMA1 | Hersteller : Infineon Technologies |
 MOSFET_(20V,40V) |
Produkt ist nicht verfügbar |
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| IAUCN04S6N013TATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IAUCN04S6N013TATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 3V @ 60µA Supplier Device Package: PG-LHDSO-10-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |