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IAUT300N10S5N014ATMA1

IAUT300N10S5N014ATMA1 Infineon Technologies


Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680 Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.79 EUR
10+ 8.22 EUR
100+ 6.65 EUR
500+ 5.91 EUR
1000+ 5.06 EUR
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Technische Details IAUT300N10S5N014ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tj), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 275µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V.

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IAUT300N10S5N014ATMA1 Hersteller : Infineon Technologies infineon-iaut300n10s5n014-datasheet-v01_01-en.pdf SP005427384
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IAUT300N10S5N014ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680 IAUT300N10S5N014 SMD N channel transistors
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IAUT300N10S5N014ATMA1 IAUT300N10S5N014ATMA1 Hersteller : Infineon Technologies Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680 Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Produkt ist nicht verfügbar
IAUT300N10S5N014ATMA1 Hersteller : Infineon Technologies Infineon_IAUT300N10S5N014_DataSheet_v01_01_EN-3163313.pdf MOSFET MOSFET_(75V 120V(
Produkt ist nicht verfügbar