IAUZ40N06S5L050ATMA1 Infineon Technologies
auf Bestellung 3172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.02 EUR |
| 5000+ | 0.87 EUR |
| 10000+ | 0.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IAUZ40N06S5L050ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V) PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tj), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 29µA, Supplier Device Package: PG-TSDSON-8-33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUZ40N06S5L050ATMA1 nach Preis ab 0.92 EUR bis 2.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IAUZ40N06S5L050ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET_)40V 60V) PG-TSDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 4606 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| IAUZ40N06S5L050ATMA1 | Hersteller : Infineon Technologies |
SP005423482 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
| IAUZ40N06S5L050ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
IAUZ40N06S5L050ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 29µA Supplier Device Package: PG-TSDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
| IAUZ40N06S5L050ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 252A Power dissipation: 71W Case: PG-TSDSON-8 Gate-source voltage: ±16V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 36.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |