IDC08D120T6MX1SA2 Infineon Technologies
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Technische Details IDC08D120T6MX1SA2 Infineon Technologies
Description: DIODE GP 1.2KV 10A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A, Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V.
Weitere Produktangebote IDC08D120T6MX1SA2
Foto | Bezeichnung | Hersteller | Beschreibung |
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IDC08D120T6MX1SA2 | Hersteller : Infineon Technologies |
Description: DIODE GP 1.2KV 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 10 A Current - Reverse Leakage @ Vr: 2.7 µA @ 1200 V |
Produkt ist nicht verfügbar |
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IDC08D120T6MX1SA2 | Hersteller : Infineon Technologies | Rectifiers |
Produkt ist nicht verfügbar |