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IDC10D120T6MX1SA1

IDC10D120T6MX1SA1 Infineon Technologies


idc10d120t6m.pdf Hersteller: Infineon Technologies
Rectifier Diode 1.2KV 15A 2-Pin Die Wafer
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Technische Details IDC10D120T6MX1SA1 Infineon Technologies

Description: DIODE GP 1.2KV 15A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 15A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A, Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V.

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IDC10D120T6MX1SA1 Hersteller : Infineon Technologies Infineon-IDC10D120T6M_L4668B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dc977af0f53 Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 15 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 1200 V
Produkt ist nicht verfügbar