IDK05G120C5XTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE SIC 1.2KV 19.1A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 19.1A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.02 EUR |
| 10+ | 5.05 EUR |
| 100+ | 4.08 EUR |
| 500+ | 3.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IDK05G120C5XTMA1 Infineon Technologies
Description: DIODE SIC 1.2KV 19.1A TO263-1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 301pF @ 1V, 1MHz, Current - Average Rectified (Io): 19.1A, Supplier Device Package: PG-TO263-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Current - Reverse Leakage @ Vr: 33 µA @ 1200 V.
Weitere Produktangebote IDK05G120C5XTMA1 nach Preis ab 4.88 EUR bis 8.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDK05G120C5XTMA1 | Hersteller : Infineon Technologies |
Schottky Diodes & Rectifiers SIC DISCRETE |
auf Bestellung 842 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
| IDK05G120C5XTMA1 | Hersteller : INFINEON TECHNOLOGIES |
IDK05G120C5XTMA1 SMD Schottky diodes |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
IDK05G120C5XTMA1 | Hersteller : Infineon Technologies |
Description: DIODE SIC 1.2KV 19.1A TO263-1 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 301pF @ 1V, 1MHz Current - Average Rectified (Io): 19.1A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 33 µA @ 1200 V |
Produkt ist nicht verfügbar |