IFS100B12N3E4B31BOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: IGBT MOD 1200V 200A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 283.31 EUR |
10+ | 282.76 EUR |
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Technische Details IFS100B12N3E4B31BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 200A 515W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 515 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V.
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Verfügbarkeit |
Preis ohne MwSt |
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IFS100B12N3E4B31BOSA1 | Hersteller : Infineon Technologies | MIPAQ Base Module With Trench/Field Stop IGBT 4 Module |
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