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IFS100B12N3E4B31BOSA1

IFS100B12N3E4B31BOSA1 Infineon Technologies


Infineon-IFS100B12N3E4_B31-DS-v02_00-en_de.pdf?fileId=db3a3043293a15c4012945dfb6fb53c6 Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 515W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 11 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+283.31 EUR
10+ 282.76 EUR
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Technische Details IFS100B12N3E4B31BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 200A 515W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 515 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V.

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IFS100B12N3E4B31BOSA1 IFS100B12N3E4B31BOSA1 Hersteller : Infineon Technologies ds_ifs100b12n3e4_b31_2_0_zh-en.pdf MIPAQ Base Module With Trench/Field Stop IGBT 4 Module
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