IGW50N60T Infineon Technologies
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.3 EUR |
| 10+ | 6.14 EUR |
| 25+ | 5.79 EUR |
| 100+ | 4.96 EUR |
| 240+ | 4.66 EUR |
| 480+ | 4.4 EUR |
| 1200+ | 3.77 EUR |
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Technische Details IGW50N60T Infineon Technologies
Description: IGW50N60 - DISCRETE IGBT WITHOUT, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/299ns, Switching Energy: 1.2mJ (on), 1.4mJ (off), Test Condition: 400V, 50A, 7Ohm, 15V, Gate Charge: 310 nC, Part Status: Active, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 333 W.
Weitere Produktangebote IGW50N60T
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IGW50N60T | Hersteller : Infineon Technologies |
 Description: IGW50N60 - DISCRETE IGBT WITHOUTPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/299ns Switching Energy: 1.2mJ (on), 1.4mJ (off) Test Condition: 400V, 50A, 7Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 333 W |
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