IGW60N60H3FKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.22 EUR |
| 12+ | 6.03 EUR |
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Technische Details IGW60N60H3FKSA1 INFINEON TECHNOLOGIES
Description: IGBT TRENCH 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 27ns/252ns, Switching Energy: 2.1mJ (on), 1.13mJ (off), Test Condition: 400V, 60A, 6Ohm, 15V, Gate Charge: 375 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 416 W.
Weitere Produktangebote IGW60N60H3FKSA1 nach Preis ab 6.03 EUR bis 11.2 EUR
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IGW60N60H3FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 416W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Kind of package: tube Manufacturer series: H3 |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW60N60H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 80A 416W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW60N60H3FKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 27ns/252ns Switching Energy: 2.1mJ (on), 1.13mJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 375 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 416 W |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW60N60H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 80A 416W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW60N60H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 80A 416000mW 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW60N60H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 80A 416W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| IGW60N60H3FKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
Produkt ist nicht verfügbar |