IHW20N65R5 Infineon Technologies
auf Bestellung 707 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 3.7 EUR |
| 100+ | 2.34 EUR |
| 480+ | 2.01 EUR |
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Technische Details IHW20N65R5 Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 82 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/250ns, Switching Energy: 540µJ (on), 160µJ (off), Test Condition: 400V, 10A, 20Ohm, 15V, Gate Charge: 97 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 150 W.
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IHW20N65R5 | Hersteller : Infineon Technologies |
 Description: INSULATED GATE BIPOLAR TRANSISTOPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 82 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/250ns Switching Energy: 540µJ (on), 160µJ (off) Test Condition: 400V, 10A, 20Ohm, 15V Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W |
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