IKA08N65F5

IKA08N65F5 Infineon Technologies


Infineon_IKA08N65F5_DS_v02_01_EN-1226886.pdf Hersteller: Infineon Technologies
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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1+5.28 EUR
10+ 4.44 EUR
25+ 4.19 EUR
100+ 3.59 EUR
250+ 3.45 EUR
500+ 3.13 EUR
1000+ 2.73 EUR
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Technische Details IKA08N65F5 Infineon Technologies

Description: IKA08N65 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: PG-TO220-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/116ns, Switching Energy: 70µJ (on), 20µJ (off), Test Condition: 400V, 4A, 48Ohm, 15V, Gate Charge: 22 nC, Part Status: Active, Current - Collector (Ic) (Max): 10.8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 31.2 W.

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IKA08N65F5 IKA08N65F5 Hersteller : Infineon Technologies INFN-S-A0001300172-1.pdf?t.download=true&u=5oefqw Description: IKA08N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10.8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 31.2 W
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