IKQ120N65EH7XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/287ns
Switching Energy: 4.2mJ (on), 3.7mJ (off)
Test Condition: 400V, 120A, 10Ohm, 15V
Gate Charge: 251 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 498 W
Description: IGBT TRENCH FS 650V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-46
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/287ns
Switching Energy: 4.2mJ (on), 3.7mJ (off)
Test Condition: 400V, 120A, 10Ohm, 15V
Gate Charge: 251 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 498 W
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.6 EUR |
10+ | 11.96 EUR |
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Technische Details IKQ120N65EH7XKSA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Supplier Device Package: PG-TO247-3-46, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 82 ns, Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/287ns, Switching Energy: 4.2mJ (on), 3.7mJ (off), Test Condition: 400V, 120A, 10Ohm, 15V, Gate Charge: 251 nC, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 498 W.
Weitere Produktangebote IKQ120N65EH7XKSA1 nach Preis ab 9.59 EUR bis 16.61 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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IKQ120N65EH7XKSA1 | Hersteller : Infineon Technologies | IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ120N65EH7XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKQ120N65EH7XKSA1 - IGBT, 160 A, 1.4 V, 498 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.4V usEccn: EAR99 euEccn: NLR Verlustleistung: 498W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP IGBT7 Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 160A SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ120N65EH7XKSA1 | Hersteller : Infineon Technologies | INDUSTRY 14 |
Produkt ist nicht verfügbar |