IKW30N65NL5XKSA1 Infineon Technologies
auf Bestellung 2403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.19 EUR |
| 10+ | 7.81 EUR |
| 100+ | 6.78 EUR |
| 240+ | 6.42 EUR |
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Technische Details IKW30N65NL5XKSA1 Infineon Technologies
Description: IGBT 650V 85A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 59 ns, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 59ns/283ns, Switching Energy: 560µJ (on), 1.35mJ (off), Test Condition: 400V, 30A, 23Ohm, 15V, Gate Charge: 168 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 227 W.
Weitere Produktangebote IKW30N65NL5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IKW30N65NL5XKSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW30N65NL5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 85A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 59ns/283ns Switching Energy: 560µJ (on), 1.35mJ (off) Test Condition: 400V, 30A, 23Ohm, 15V Gate Charge: 168 nC Part Status: Obsolete Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 227 W |
Produkt ist nicht verfügbar |