IMD10AT108 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms, 100Ohms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMT6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
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Technische Details IMD10AT108 Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V, Frequency - Transition: 250MHz, 200MHz, Resistor - Base (R1): 10kOhms, 100Ohms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SMT6, Part Status: Active.
Weitere Produktangebote IMD10AT108 nach Preis ab 0.17 EUR bis 0.77 EUR
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IMD10AT108 | Hersteller : ROHM Semiconductor |
Digital Transistors NPN/PNP 50V 500MA SOT-457 |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
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IMD10AT108 | Hersteller : Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 10kOhms, 100Ohms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMT6 Part Status: Active |
auf Bestellung 7715 Stücke: Lieferzeit 10-14 Tag (e) |
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| IMD10A T108 | Hersteller : ROHM | SOT163-D10 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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IMD10AT108 | Hersteller : ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Frequency: 200MHz; 250MHz Mounting: SMD Base-emitter resistor: 10kΩ Case: SC74; SOT457 Collector-emitter voltage: 50V Current gain: 68...600 Collector current: 0.5/0.1A Type of transistor: NPN / PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 0.1/10kΩ Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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IMD10AT108 | Hersteller : ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Frequency: 200MHz; 250MHz Mounting: SMD Base-emitter resistor: 10kΩ Case: SC74; SOT457 Collector-emitter voltage: 50V Current gain: 68...600 Collector current: 0.5/0.1A Type of transistor: NPN / PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT; complementary pair Base resistor: 0.1/10kΩ |
Produkt ist nicht verfügbar |