auf Bestellung 434 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 41.04 EUR |
| 10+ | 36.47 EUR |
| 25+ | 34.02 EUR |
| 50+ | 32.96 EUR |
| 100+ | 31.91 EUR |
| 240+ | 29.76 EUR |
| 480+ | 27.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMW120R020M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 17.6mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V.
Weitere Produktangebote IMW120R020M1HXKSA1 nach Preis ab 32.11 EUR bis 41.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMW120R020M1HXKSA1 | Hersteller : Infineon Technologies |
 Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 17.6mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| IMW120R020M1HXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 98A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
| IMW120R020M1HXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH SiC 1.2KV 98A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
| IMW120R020M1HXKSA1 | Hersteller : Infineon Technologies |
SP005448291 |
Produkt ist nicht verfügbar |
||||||||||
| IMW120R020M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W Kind of package: tube Mounting: THT Drain current: 71A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 188W Polarisation: unipolar Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 213A Case: TO247 Drain-source voltage: 1.2kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
| IMW120R020M1HXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; Idm: 213A; 188W Kind of package: tube Mounting: THT Drain current: 71A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 188W Polarisation: unipolar Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 213A Case: TO247 Drain-source voltage: 1.2kV |
Produkt ist nicht verfügbar |