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IPA050N10NM5SXKSA1 Infineon Technologies
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Description: MOSFET N-CH 100V 66A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.52 EUR |
10+ | 3.75 EUR |
100+ | 2.98 EUR |
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Technische Details IPA050N10NM5SXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 66A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 84µA, Supplier Device Package: PG-TO220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V.
Weitere Produktangebote IPA050N10NM5SXKSA1 nach Preis ab 1.99 EUR bis 4.56 EUR
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 829 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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IPA050N10NM5SXKSA1 | Hersteller : Infineon Technologies |
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IPA050N10NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 264A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPA050N10NM5SXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 264A; 38W; TO220FP Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 264A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |