IPA50R520CP

IPA50R520CP Infineon Technologies


ipa50r520cp_rev1.1.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 500V 7.1A 3-Pin(3+Tab) TO-220FP Tube
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Technische Details IPA50R520CP Infineon Technologies

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PG-TO220-3-31, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V.

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IPA50R520CP Hersteller : Infineon Technologies INFNS15801-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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IPA50R520CP IPA50R520CP Hersteller : Infineon Technologies IPA50R520CP_rev2.0-79452.pdf MOSFET N-Ch 500V 7A TO220FP-3 CoolMOS CP
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