IPB009N03LGATMA1 Infineon Technologies
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.02 EUR |
| 10+ | 6.32 EUR |
| 100+ | 5.17 EUR |
| 500+ | 4.42 EUR |
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Technische Details IPB009N03LGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO263-7-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V.
Weitere Produktangebote IPB009N03LGATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPB009N03LGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 180A On-state resistance: 0.95mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: logic level Anzahl je Verpackung: 1000 Stücke |
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IPB009N03LGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-7-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V |
Produkt ist nicht verfügbar |
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IPB009N03LGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 180A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-7-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 15 V |
Produkt ist nicht verfügbar |
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IPB009N03LGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 250W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 180A On-state resistance: 0.95mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |