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IPB015N04LGATMA1

IPB015N04LGATMA1 Infineon Technologies

IPB015N04L_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431936bc4b0119382488c359d3 Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.92 EUR
10+ 5.52 EUR
100+ 4.1 EUR
500+ 3.58 EUR
Mindestbestellmenge: 3
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Technische Details IPB015N04LGATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2V @ 200µA, Supplier Device Package: PG-TO263-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.

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IPB015N04LGATMA1 IPB015N04LGATMA1 Hersteller : Infineon Technologies ipb015n04l_rev1.0.pdf Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB015N04LGATMA1 Hersteller : INFINEON TECHNOLOGIES IPB015N04L_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431936bc4b0119382488c359d3 IPB015N04LG SMD N channel transistors
Produkt ist nicht verfügbar
IPB015N04LGATMA1 IPB015N04LGATMA1 Hersteller : Infineon Technologies IPB015N04L_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431936bc4b0119382488c359d3 Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Produkt ist nicht verfügbar
IPB015N04LGATMA1 IPB015N04LGATMA1 Hersteller : Infineon Technologies Infineon_IPB015N04L_DS_v01_02_en-1731681.pdf MOSFETs N-Ch 40V 120A D2PAK-2 OptiMOS 3
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