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IPB026N06NATMA1

IPB026N06NATMA1 Infineon Technologies

IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 25A/100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.81 EUR
2000+ 1.72 EUR
Mindestbestellmenge: 1000
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Produktbewertung abgeben

Technische Details IPB026N06NATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 25A/100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 75µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V.

Weitere Produktangebote IPB026N06NATMA1 nach Preis ab 1.56 EUR bis 3.99 EUR

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IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : Infineon Technologies Infineon_IPB026N06N_DS_v02_02_en-1227367.pdf MOSFET N-Ch 60V 100A D2PAK-2
auf Bestellung 1150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.17 EUR
10+ 2.59 EUR
100+ 2.2 EUR
250+ 1.97 EUR
500+ 1.78 EUR
1000+ 1.69 EUR
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : Infineon Technologies IPB026N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043372d5cc8013754c7b2a74f7c Description: MOSFET N-CH 60V 25A/100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
auf Bestellung 2943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.82 EUR
10+ 3.17 EUR
100+ 2.52 EUR
500+ 2.14 EUR
Mindestbestellmenge: 5
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : Infineon Technologies ipb026n06n_rev2.2.pdf Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
39+3.99 EUR
44+ 3.29 EUR
100+ 2.57 EUR
250+ 2.44 EUR
500+ 1.99 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 39
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : Infineon Technologies ipb026n06n_rev2.2.pdf Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
39+3.99 EUR
44+ 3.29 EUR
100+ 2.57 EUR
250+ 2.44 EUR
500+ 1.99 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 39
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : Infineon Technologies ipb026n06n_rev2.2.pdf Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : Infineon Technologies ipb026n06n_rev2.2.pdf Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : INFINEON TECHNOLOGIES IPB026N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : Infineon Technologies ipb026n06n_rev2.2.pdf Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IPB026N06NATMA1 IPB026N06NATMA1 Hersteller : INFINEON TECHNOLOGIES IPB026N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar