IPB033N10N5LFATMA1 Infineon Technologies
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 10.1 EUR |
| 19+ | 8.14 EUR |
| 25+ | 7.58 EUR |
| 100+ | 6 EUR |
| 250+ | 5.7 EUR |
| 500+ | 5.06 EUR |
| 1000+ | 3.86 EUR |
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Technische Details IPB033N10N5LFATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 120A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4.1V @ 150µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V.
Weitere Produktangebote IPB033N10N5LFATMA1 nach Preis ab 3.86 EUR bis 10.93 EUR
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IPB033N10N5LFATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1030 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB033N10N5LFATMA1 | Hersteller : Infineon Technologies |
MOSFET DIFFERENTIATED MOSFETS |
auf Bestellung 5749 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB033N10N5LFATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB033N10N5LFATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB033N10N5LFATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 179W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0027ohm |
auf Bestellung 6086 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB033N10N5LFATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 159A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB033N10N5LFATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB033N10N5LFATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V |
Produkt ist nicht verfügbar |