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IPB048N06LG INFINEON


INFNS16292-1.pdf?t.download=true&u=5oefqw Hersteller: INFINEON

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Technische Details IPB048N06LG INFINEON

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 270µA, Supplier Device Package: PG-TO-263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V.

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IPB048N06LG Hersteller : infineon INFNS16292-1.pdf?t.download=true&u=5oefqw 07+ to-263/d2-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
IPB048N06LG Hersteller : infineon INFNS16292-1.pdf?t.download=true&u=5oefqw to-263/d2-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
IPB048N06LG IPB048N06LG Hersteller : Infineon Technologies INFNS16292-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO-263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V
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