Technische Details IPB04N03LB infineon
Description: MOSFET N-CH 30V 80A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 55A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2V @ 70µA, Supplier Device Package: PG-TO263-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5203 pF @ 15 V.
Weitere Produktangebote IPB04N03LB
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPB04N03LB | Hersteller : infineon | to-263/d2-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB04N03LB | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5203 pF @ 15 V |
Produkt ist nicht verfügbar |
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IPB04N03LB | Hersteller : Infineon Technologies | MOSFET N-KANAL POWER MOS |
Produkt ist nicht verfügbar |