IPB065N15N3GATMA1 Infineon Technologies
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.98 EUR |
10+ | 9.54 EUR |
25+ | 9.47 EUR |
100+ | 7.99 EUR |
500+ | 7.22 EUR |
1000+ | 6.62 EUR |
2000+ | 6.48 EUR |
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Technische Details IPB065N15N3GATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 130A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V.
Weitere Produktangebote IPB065N15N3GATMA1 nach Preis ab 7.59 EUR bis 12.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPB065N15N3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 130A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
auf Bestellung 827 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB065N15N3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 150V 130A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB065N15N3GATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB065N15N3GATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB065N15N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 150V Drain current: 130A Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IPB065N15N3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3 On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 150V Drain current: 130A |
Produkt ist nicht verfügbar |