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IPB068N20NM6ATMA1

IPB068N20NM6ATMA1 Infineon Technologies

Infineon-IPB068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3266c0ee0c77 Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+7.53 EUR
Mindestbestellmenge: 1000
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Technische Details IPB068N20NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 134A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 258µA, Supplier Device Package: PG-TO263-3-2, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V.

Weitere Produktangebote IPB068N20NM6ATMA1 nach Preis ab 7.34 EUR bis 13.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPB068N20NM6ATMA1 IPB068N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPB068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3266c0ee0c77 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 134A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.27 EUR
10+ 11.38 EUR
100+ 9.48 EUR
500+ 8.36 EUR
Mindestbestellmenge: 2
IPB068N20NM6ATMA1 IPB068N20NM6ATMA1 Hersteller : Infineon Technologies Infineon_IPB068N20NM6_DataSheet_v02_00_EN-3398029.pdf MOSFET TRENCH >=100V
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+13.38 EUR
10+ 11.46 EUR
25+ 10.4 EUR
100+ 9.56 EUR
250+ 8.99 EUR
500+ 8.64 EUR
1000+ 7.34 EUR
IPB068N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-IPB068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3266c0ee0c77 TRENCH >=100V
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