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IPD079N06L3GATMA1

IPD079N06L3GATMA1 Infineon Technologies

Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.72 EUR
5000+ 0.69 EUR
Mindestbestellmenge: 2500
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Technische Details IPD079N06L3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 50A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 34µA, Supplier Device Package: PG-TO252-3-311, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V.

Weitere Produktangebote IPD079N06L3GATMA1 nach Preis ab 0.72 EUR bis 1.74 EUR

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Preis ohne MwSt
IPD079N06L3GATMA1 IPD079N06L3GATMA1 Hersteller : Infineon Technologies Infineon_IPD079N06L3_DS_v02_00_en-1227143.pdf MOSFET
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.74 EUR
10+ 1.42 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2500+ 0.72 EUR
Mindestbestellmenge: 2
IPD079N06L3GATMA1 IPD079N06L3GATMA1 Hersteller : Infineon Technologies Infineon-IPD079N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b5528634dc0 Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 8180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.74 EUR
13+ 1.43 EUR
100+ 1.11 EUR
500+ 0.94 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 11
IPD079N06L3GATMA1 Hersteller : Infineon Technologies ipd079n06l3_rev2.0.pdffolderiddb3a30431441fb5d01148ca9f1be0e77fileiddb3a30431ddc9372011e2b55286.pdf SP005559925
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)