Produkte > INFINEON TECHNOLOGIES > IPD100N04S4L02ATMA1
IPD100N04S4L02ATMA1

IPD100N04S4L02ATMA1 Infineon Technologies

Infineon_IPD100N04S4L_02_DS_v01_00_EN-1901241.pdf Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.21 EUR
10+ 3.5 EUR
100+ 2.78 EUR
250+ 2.57 EUR
500+ 2.32 EUR
1000+ 1.99 EUR
2500+ 1.9 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details IPD100N04S4L02ATMA1 Infineon Technologies

Description: MOSFET N-CHANNEL_30/40V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 95µA, Supplier Device Package: PG-TO252-3-313, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IPD100N04S4L02ATMA1 nach Preis ab 2.02 EUR bis 4.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IPD100N04S4L02ATMA1 IPD100N04S4L02ATMA1 Hersteller : Infineon Technologies Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Description: MOSFET N-CHANNEL_30/40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.26 EUR
10+ 3.53 EUR
100+ 2.81 EUR
500+ 2.38 EUR
1000+ 2.02 EUR
Mindestbestellmenge: 5
IPD100N04S4L02ATMA1 Hersteller : Infineon Technologies ipd100n04s4-02_ds_1_0.pdf Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD100N04S4L02ATMA1 IPD100N04S4L02ATMA1 Hersteller : Infineon Technologies ipd100n04s4-02_ds_1_0.pdf Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD100N04S4L02ATMA1 IPD100N04S4L02ATMA1 Hersteller : Infineon Technologies Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Description: MOSFET N-CHANNEL_30/40V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar