IPG20N04S4L11ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.01 EUR |
11+ | 1.64 EUR |
100+ | 1.28 EUR |
500+ | 1.08 EUR |
1000+ | 0.88 EUR |
2000+ | 0.83 EUR |
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Technische Details IPG20N04S4L11ATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 41W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 15µA, Supplier Device Package: PG-TDSON-8-4, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote IPG20N04S4L11ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPG20N04S4L11ATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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IPG20N04S4L11ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Mounting: SMD Case: PG-TDSON-8-4 Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 40V Drain current: 20A On-state resistance: 11.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 41W Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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IPG20N04S4L11ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||
IPG20N04S4L11ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A Mounting: SMD Case: PG-TDSON-8-4 Polarisation: unipolar Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 80A Drain-source voltage: 40V Drain current: 20A On-state resistance: 11.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 41W |
Produkt ist nicht verfügbar |