IPG20N06S4L11ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.78 EUR |
10+ | 2.31 EUR |
100+ | 1.84 EUR |
500+ | 1.56 EUR |
1000+ | 1.32 EUR |
2000+ | 1.25 EUR |
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Technische Details IPG20N06S4L11ATMA1 Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 65W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V, Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 28µA, Supplier Device Package: PG-TDSON-8-4, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote IPG20N06S4L11ATMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPG20N06S4L11ATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPG20N06S4L11ATMA1 | Hersteller : Infineon |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPG20N06S4L11ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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