IPI60R125CP

IPI60R125CP Infineon Technologies


INFNS16994-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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Technische Details IPI60R125CP Infineon Technologies

Description: 25A, 600V, 0.125OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.1mA, Supplier Device Package: PG-TO262-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V.

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IPI60R125CP IPI60R125CP Hersteller : Infineon Technologies Infineon_IPI60R125CP_DS_v02_00_en-3164690.pdf MOSFET N-Ch 600V 25A I2PAK-3 CoolMOS CP
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