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IPP024N06N3GXKSA1

IPP024N06N3GXKSA1 Infineon Technologies

ipp024n06n3_rev2.2.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 7248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
48+3.28 EUR
500+ 3.13 EUR
1000+ 2.99 EUR
2500+ 2.84 EUR
Mindestbestellmenge: 48
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Technische Details IPP024N06N3GXKSA1 Infineon Technologies

Description: MOSFET N-CH 60V 120A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 196µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V.

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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : Infineon Technologies ipp024n06n3_rev2.2.pdf Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 7250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
47+3.3 EUR
500+ 3.15 EUR
1000+ 3 EUR
2500+ 2.86 EUR
Mindestbestellmenge: 47
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : Infineon Technologies ipp024n06n3_rev2.2.pdf Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
500+4.23 EUR
Mindestbestellmenge: 500
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : Infineon Technologies IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7 Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
102+4.78 EUR
Mindestbestellmenge: 102
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.74 EUR
13+ 5.79 EUR
18+ 4.02 EUR
19+ 3.8 EUR
250+ 3.76 EUR
Mindestbestellmenge: 11
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.74 EUR
13+ 5.79 EUR
18+ 4.02 EUR
19+ 3.8 EUR
Mindestbestellmenge: 11
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : Infineon Technologies ipp024n06n3_rev2.2.pdf Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 7250 Stücke:
Lieferzeit 14-21 Tag (e)
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : Infineon Technologies ipp024n06n3_rev2.2.pdf Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : Infineon Technologies IPP024N06N3_Rev2.2.pdf?fileId=db3a30432313ff5e01239f1f52a67151&folderId=db3a304313b8b5a60113cee8763b02d7 Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
Produkt ist nicht verfügbar
IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Hersteller : Infineon Technologies Infineon_IPP024N06N3_DS_v02_02_en-1731845.pdf MOSFET N-Ch 60V 120A TO220-3
Produkt ist nicht verfügbar