IPT007N06NATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Description: MOSFET N-CH 60V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 5.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPT007N06NATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 300A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 280µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V.
Weitere Produktangebote IPT007N06NATMA1 nach Preis ab 4.18 EUR bis 17.36 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 52A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 884 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 52A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 884 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 52A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 1044 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 52A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 1044 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 300A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 280µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V |
auf Bestellung 8967 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | MOSFET TRENCH 40<-<100V |
auf Bestellung 347 Stücke: Lieferzeit 10-14 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 52A 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPT007N06NATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 300 A, 660 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 8Pin(s) Produktpalette: -999 productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 660µohm |
auf Bestellung 12683 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 552 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPT007N06NATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 300 A, 660 µohm, HSOF, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.8V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 8Pin(s) Produktpalette: -999 productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 660µohm |
auf Bestellung 12683 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPT007N06NATMA1 Produktcode: 180783 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IPT007N06NATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 60V 52A 9-Pin(8+Tab) HSOF T/R |
Produkt ist nicht verfügbar |
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IPT007N06NATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 216nC Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPT007N06NATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 375W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 0.7mΩ Mounting: SMD Gate charge: 216nC Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |