auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.52 EUR |
| 10+ | 1.31 EUR |
| 100+ | 1.11 EUR |
| 500+ | 1.09 EUR |
| 1500+ | 1.08 EUR |
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Technische Details IPU95R1K2P7AKMA1 Infineon Technologies
Description: MOSFET N-CH 950V 6A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 140µA, Supplier Device Package: PG-TO251-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V.
Weitere Produktangebote IPU95R1K2P7AKMA1 nach Preis ab 1.33 EUR bis 2.46 EUR
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IPU95R1K2P7AKMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 950V 6A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V |
auf Bestellung 1468 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R1K2P7AKMA1 | Hersteller : INFINEON |
Description: INFINEON - IPU95R1K2P7AKMA1 - Leistungs-MOSFET, n-Kanal, 950 V, 6 A, 1.03 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 950V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pins Produktpalette: CoolMOS P7 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.03ohm |
auf Bestellung 1748 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU95R1K2P7AKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 950V 6A 3-Pin(3+Tab) TO-251 Tube |
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IPU95R1K2P7AKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 52W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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IPU95R1K2P7AKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; IPAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.7A Power dissipation: 52W Case: IPAK Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |