IPW60R099CP Infineon Technologies
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 14.61 EUR |
| 10+ | 12.51 EUR |
| 25+ | 11.35 EUR |
| 100+ | 10.42 EUR |
| 240+ | 9.82 EUR |
| 480+ | 9.2 EUR |
| 1200+ | 8.29 EUR |
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Technische Details IPW60R099CP Infineon Technologies
Description: MOSFET N-CH 600V 31A TO247-3-1, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V.
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IPW60R099CP Produktcode: 72969 |
 Transistoren > MOSFET N-CH |
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IPW60R099CP | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO247-3-1 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: PG-TO247-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
Produkt ist nicht verfügbar |