IPW60R099CP

IPW60R099CP Infineon Technologies


Infineon_IPW60R099CP_DS_v02_01_en-1732039.pdf Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 31A TO247-3 CoolMOS CP
auf Bestellung 128 Stücke:

Lieferzeit 10-14 Tag (e)
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1+14.61 EUR
10+ 12.51 EUR
25+ 11.35 EUR
100+ 10.42 EUR
240+ 9.82 EUR
480+ 9.2 EUR
1200+ 8.29 EUR
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Technische Details IPW60R099CP Infineon Technologies

Description: MOSFET N-CH 600V 31A TO247-3-1, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V.

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IPW60R099CP IPW60R099CP
Produktcode: 72969
INFNS16488-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
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IPW60R099CP IPW60R099CP Hersteller : Infineon Technologies INFNS16488-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 31A TO247-3-1
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Produkt ist nicht verfügbar