IPW60R125CP Infineon Technologies
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.88 EUR |
10+ | 9.33 EUR |
25+ | 8.47 EUR |
100+ | 7.78 EUR |
240+ | 7.3 EUR |
480+ | 6.85 EUR |
1200+ | 6.16 EUR |
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Technische Details IPW60R125CP Infineon Technologies
Description: 25A, 600V, 0.125OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.1mA, Supplier Device Package: PG-TO247-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V.
Weitere Produktangebote IPW60R125CP
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IPW60R125CP | Hersteller : INFINEON |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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IPW60R125CP Produktcode: 143316 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IPW60R125CP | Hersteller : Infineon Technologies |
Description: 25A, 600V, 0.125OHM, N-CHANNEL M Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: PG-TO247-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
Produkt ist nicht verfügbar |