Weitere Produktangebote IPW60R125P6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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| IPW60R125P6 | Hersteller : Infineon Technologies |
 Description: POWER FIELD-EFFECT TRANSISTORPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 960µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPW60R125P6 | Hersteller : Infineon Technologies |
MOSFET HIGH POWER PRICE/PERFORM |
Produkt ist nicht verfügbar |