IPW60R190C6FKSA1 Infineon Technologies
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 5.29 EUR |
| 33+ | 4.65 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.43 EUR |
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Technische Details IPW60R190C6FKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 630µA, Supplier Device Package: PG-TO247-3-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V.
Weitere Produktangebote IPW60R190C6FKSA1 nach Preis ab 3.66 EUR bis 6.42 EUR
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 20.2A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO247-3-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IPW60R190C6FKSA1 | Hersteller : Infineon Technologies |
MOSFET HIGH POWER_LEGACY |
Produkt ist nicht verfügbar |