IPW65R045C7 Infineon Technologies
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.1 EUR |
10+ | 16.83 EUR |
25+ | 16.37 EUR |
50+ | 15.45 EUR |
100+ | 14.56 EUR |
240+ | 14.1 EUR |
480+ | 13.18 EUR |
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Technische Details IPW65R045C7 Infineon Technologies
Description: 46A, 650V, 0.045OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.25mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V.
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IPW65R045C7 | Hersteller : Infineon technologies |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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IPW65R045C7 | Hersteller : Infineon Technologies |
Description: 46A, 650V, 0.045OHM, N-CHANNEL M Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
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