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IPW65R660CFDFKSA1 Infineon Technologies

Name: IPW65R660CFDFKSA1
Brand: Infineon Technologies
SKU: 12752644-3
Price: 1.65 EUR
Availability: InStock

IPW65R660CFD_2.41.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f29829e012f2efe7ac539b4

Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V

auf Bestellung 14517 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis ohne MwSt
302+	1.65 EUR

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Technische Details IPW65R660CFDFKSA1 Infineon Technologies

Description: MOSFET N-CH 700V 6A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: PG-TO247-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V.

Weitere Produktangebote IPW65R660CFDFKSA1

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
IPW65R660CFDFKSA1	Hersteller : Infineon Technologies	Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-247 Tube	Produkt ist nicht verfügbar
IPW65R660CFDFKSA1	Hersteller : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 62.5W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.66Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke	Produkt ist nicht verfügbar
IPW65R660CFDFKSA1	Hersteller : Infineon Technologies	Description: MOSFET N-CH 700V 6A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO247-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V	Produkt ist nicht verfügbar
IPW65R660CFDFKSA1	Hersteller : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 62.5W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.66Ω Mounting: THT Kind of package: tube Kind of channel: enhanced	Produkt ist nicht verfügbar