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IPZ40N04S5L4R8ATMA1

IPZ40N04S5L4R8ATMA1 Infineon Technologies


Infineon-IPZ40N04S5L-4R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d66011b3e4894 Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.6 EUR
10000+ 0.57 EUR
Mindestbestellmenge: 5000
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Technische Details IPZ40N04S5L4R8ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 40A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2V @ 17µA, Supplier Device Package: PG-TSDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V, Qualification: AEC-Q101.

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IPZ40N04S5L4R8ATMA1 IPZ40N04S5L4R8ATMA1 Hersteller : Infineon Technologies Infineon-IPZ40N04S5L-4R8-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d66011b3e4894 Description: MOSFET N-CH 40V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 17µA
Supplier Device Package: PG-TSDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
15+ 1.25 EUR
100+ 0.97 EUR
500+ 0.82 EUR
1000+ 0.67 EUR
2000+ 0.63 EUR
Mindestbestellmenge: 12
IPZ40N04S5L4R8ATMA1 IPZ40N04S5L4R8ATMA1 Hersteller : Infineon Technologies Infineon_IPZ40N04S5L_4R8_DS_v01_01_EN-1732101.pdf MOSFET MOSFET_(20V 40V)
auf Bestellung 22775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.54 EUR
10+ 1.26 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.64 EUR
5000+ 0.6 EUR
Mindestbestellmenge: 2
IPZ40N04S5L4R8ATMA1 IPZ40N04S5L4R8ATMA1 Hersteller : Infineon Technologies 226681850694751infineon-ipz40n04s5-8r4.pdffileid5546d4624cb7f111014d66012a70489c.pdf Trans MOSFET N-CH 40V 40A Automotive 8-Pin TSDSON EP T/R
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