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IPZ60R099C7XKSA1

IPZ60R099C7XKSA1 Infineon Technologies

Infineon-IPZ60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4ca5bbae4110 Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 14461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
79+6.22 EUR
Mindestbestellmenge: 79
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Technische Details IPZ60R099C7XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 22A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 490µA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V.

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IPZ60R099C7XKSA1 IPZ60R099C7XKSA1 Hersteller : Infineon Technologies Infineon_IPZ60R099C7_DS_v02_00_EN-1534445.pdf MOSFET HIGH POWER_NEW
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.42 EUR
10+ 8.94 EUR
25+ 7.04 EUR
100+ 6.71 EUR
240+ 6.69 EUR
480+ 6.49 EUR
1200+ 5.63 EUR
IPZ60R099C7XKSA1 IPZ60R099C7XKSA1 Hersteller : Infineon Technologies 182infineon-ipz60r099c7-ds-v02_00-en.pdffileid5546d4624cb7f111014d4c.pdf Trans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
IPZ60R099C7XKSA1 IPZ60R099C7XKSA1 Hersteller : Infineon Technologies 182infineon-ipz60r099c7-ds-v02_00-en.pdffileid5546d4624cb7f111014d4c.pdf Trans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
IPZ60R099C7XKSA1 IPZ60R099C7XKSA1 Hersteller : Infineon Technologies 182infineon-ipz60r099c7-ds-v02_00-en.pdffileid5546d4624cb7f111014d4c.pdf Trans MOSFET N-CH 600V 22A 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
IPZ60R099C7XKSA1 IPZ60R099C7XKSA1 Hersteller : Infineon Technologies Infineon-IPZ60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4ca5bbae4110 Description: MOSFET N-CH 600V 22A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar