IPZ65R095C7

IPZ65R095C7 Infineon Technologies


INFNS28763-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: IPZ65R095 - 650V AND 700V COOLMO
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO247-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 410 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
71+7.48 EUR
Mindestbestellmenge: 71
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Technische Details IPZ65R095C7 Infineon Technologies

Description: IPZ65R095 - 650V AND 700V COOLMO, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 4V @ 590µA, Supplier Device Package: PG-TO247-4-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V.

Weitere Produktangebote IPZ65R095C7 nach Preis ab 6.09 EUR bis 10.74 EUR

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IPZ65R095C7 IPZ65R095C7 Hersteller : Infineon Technologies Infineon_IPZ65R095C7_DS_v02_00_en-1732016.pdf MOSFET HIGH POWER_NEW
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.74 EUR
10+ 9.2 EUR
25+ 8.34 EUR
100+ 7.66 EUR
240+ 7.22 EUR
480+ 6.76 EUR
1200+ 6.09 EUR