IPZA60R037P7XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.28 EUR |
| 30+ | 13.98 EUR |
| 120+ | 13.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPZA60R037P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 76A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 4V @ 1.48mA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V.
Weitere Produktangebote IPZA60R037P7XKSA1 nach Preis ab 13.52 EUR bis 21.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPZA60R037P7XKSA1 | Hersteller : Infineon Technologies |
MOSFET HIGH POWER_NEW |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IPZA60R037P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 255W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 37mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
IPZA60R037P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
IPZA60R037P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
IPZA60R037P7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 255W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 37mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |