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IPZA60R180P7XKSA1

IPZA60R180P7XKSA1 Infineon Technologies


Infineon-IPZA60R180P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016045bd6c491a3c Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 221 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
132+3.71 EUR
Mindestbestellmenge: 132
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Technische Details IPZA60R180P7XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 18A TO247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 280µA, Supplier Device Package: PG-TO247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V.

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IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : Infineon Technologies Infineon_IPZA60R180P7_DS_v02_01_EN-3362762.pdf MOSFET HIGH POWER_NEW
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.88 EUR
10+ 5.77 EUR
25+ 5.46 EUR
100+ 4.66 EUR
240+ 4.42 EUR
480+ 4.15 EUR
1200+ 3.56 EUR
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : Infineon Technologies infineon-ipza60r180p7-ds-v02_01-en.pdf Trans MOSFET N-CH 600V 18A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : Infineon Technologies infineon-ipza60r180p7-ds-v02_01-en.pdf Trans MOSFET N-CH 600V 18A 4-Pin(4+Tab) TO-247 Tube
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : Infineon Technologies infineon-ipza60r180p7-ds-v02_01-en.pdf Trans MOSFET N-CH 600V 18A 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : INFINEON TECHNOLOGIES IPZA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : Infineon Technologies infineon-ipza60r180p7-ds-v02_01-en.pdf Trans MOSFET N-CH 600V 18A 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : Infineon Technologies Infineon-IPZA60R180P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016045bd6c491a3c Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Produkt ist nicht verfügbar
IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Hersteller : INFINEON TECHNOLOGIES IPZA60R180P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 72W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 72W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar